All MOSFET. PV616DA Datasheet

 

PV616DA Datasheet and Replacement


   Type Designator: PV616DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SOP-8
 

 PV616DA substitution

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PV616DA Datasheet (PDF)

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PV616DA

PV616DA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 8.5m 12A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G : GATE D : DRA

Datasheet: PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , IRFP260 , PV6A4BA , PV6A6BA , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA , PW5S6EA , PX567EA .

History: IVN5001ANE | IPP048N06 | IRF7343QTR | MTE150P20H8 | HYG082N03LR1C1 | IPP100N08S2-07 | IRFH5304

Keywords - PV616DA MOSFET datasheet

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