PV616DA Specs and Replacement

Type Designator: PV616DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: SOP-8

PV616DA substitution

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PV616DA datasheet

 ..1. Size:266K  niko-sem
 pv616da.pdf pdf_icon

PV616DA

PV616DA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 8.5m 12A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G GATE D DRA... See More ⇒

Detailed specifications: PT676BA, PT6J6BA, PV521BA, PV555BA, PV561BA, PV563BA, PV5G3EA, PV609CA, 2SK3878, PV6A4BA, PV6A6BA, PV6A8BA, PV6D2DA, PW567EA, PW5D8EA, PW5S6EA, PX567EA

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