All MOSFET. PV6A6BA Datasheet

 

PV6A6BA Datasheet and Replacement


   Type Designator: PV6A6BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP-8
 

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PV6A6BA Datasheet (PDF)

 ..1. Size:215K  niko-sem
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PV6A6BA

PV6A6BAN-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G40V 9m 10.9A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VTA = 25 C

Datasheet: PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA , K3569 , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA , PW5S6EA , PX567EA , PX567JZ , PX5D8EA .

History: AO4800B

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