All MOSFET. PV6D2DA Datasheet

 

PV6D2DA Datasheet and Replacement


   Type Designator: PV6D2DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8
 

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PV6D2DA Datasheet (PDF)

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PV6D2DA

PV6D2DA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25m 6.4A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G : GATE D : DRA

Datasheet: PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA , IRF4905 , PW567EA , PW5D8EA , PW5S6EA , PX567EA , PX567JZ , PX5D8EA , PX5D8JZ-T , PX5S6EA .

History: IRFHS9351 | NP90N04VUG | IRFH5304 | HYG082N03LR1C1 | IPP100N08S2-07 | IRF7343QTR | MTE150P20H8

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