PV6D2DA Specs and Replacement

Type Designator: PV6D2DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP-8

PV6D2DA substitution

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PV6D2DA datasheet

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PV6D2DA

PV6D2DA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25m 6.4A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G GATE D DRA... See More ⇒

Detailed specifications: PV561BA, PV563BA, PV5G3EA, PV609CA, PV616DA, PV6A4BA, PV6A6BA, PV6A8BA, IRF4905, PW567EA, PW5D8EA, PW5S6EA, PX567EA, PX567JZ, PX5D8EA, PX5D8JZ-T, PX5S6EA

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