PX5D8EA MOSFET Datasheet: N-Ch, 20V, 0.8A. Full specification with pinout and replacement list

PX5D8EA Specs and Replacement

Type Designator: PX5D8EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 19 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT-523

PX5D8EA substitution

- MOSFET ⓘ Cross-Reference Search

PX5D8EA datasheet

..1. Size:366K niko-sem
px5d8ea.pdf pdf_icon

N-Channel Logic Level Enhancement PX5D8EA NIKO-SEM Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD ... See More ⇒

9.1. Size:420K niko-sem
px5d8jz-t.pdf pdf_icon

Dual N-Channel Logic Level PX5D8JZ-T NIKO-SEM Enhancement Mode Field Effect Transistor SOT-563 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 20V 300m 0.78A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize... See More ⇒

Detailed specifications: PV6A6BA , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA , PW5S6EA , PX567EA , PX567JZ , SPP20N60C3 , PX5D8JZ-T , PX5S6EA , PX5S6JZ , PX607UZ , PZ5203EMAA , PZ567JZ , PZ5D8EA , PZ5D8JZ .