PZ567JZ Datasheet and Replacement
Type Designator: PZ567JZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT-363
PZ567JZ substitution
PZ567JZ Datasheet (PDF)
pz567jz.pdf

Dual P-Channel Logic Level PZ567JZ NIKO-SEM Enhancement Mode Field Effect Transistor SOT-363 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.
Datasheet: PX567EA , PX567JZ , PX5D8EA , PX5D8JZ-T , PX5S6EA , PX5S6JZ , PX607UZ , PZ5203EMAA , 4435 , PZ5D8EA , PZ5D8JZ , PZ5G7EA , PZ5S6EA , PZ5S6JZ , PZ607UZ , PZC010BL , PZC010HK .
History: NTND31225CZ | FQA18N50V2
Keywords - PZ567JZ MOSFET datasheet
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History: NTND31225CZ | FQA18N50V2



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