All MOSFET. PZ5S6JZ Datasheet

 

PZ5S6JZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: PZ5S6JZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.57 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: SOT-363

 PZ5S6JZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZ5S6JZ Datasheet (PDF)

 ..1. Size:226K  niko-sem
pz5s6jz.pdf

PZ5S6JZ
PZ5S6JZ

Dual N-Channel Logic Level PZ5S6JZ NIKO-SEM Enhancement Mode Field Effect Transistor SOT-363 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 30V 480m 0.57A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize S

 9.1. Size:226K  niko-sem
pz5s6ea.pdf

PZ5S6JZ
PZ5S6JZ

N-Channel Logic Level Enhancement PZ5S6EA NIKO-SEM Mode Field Effect Transistor SOT-323 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 480m 0.61A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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