SJMN230R70ZF
MOSFET. Datasheet pdf. Equivalent
Type Designator: SJMN230R70ZF
Marking Code: N230R70Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 37
nS
Cossⓘ -
Output Capacitance: 38
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23
Ohm
Package:
TO-220F
SJMN230R70ZF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SJMN230R70ZF
Datasheet (PDF)
..1. Size:643K auk
sjmn230r70zf.pdf 
SJMN230R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: RDS(on)=0.2 (Typ.) Very Low FOM (R X Q ) DS(on) g 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN230R70ZF N230R70Z TO-22
9.1. Size:633K auk
sjmn250r80zw.pdf
SJMN250R80ZW Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode Ordering Information G D S Part Number Marking Package TO-247 SJMN250R80ZW N250R80Z TO-247 Marking Information Column 1: Manufac
9.2. Size:731K auk
sjmn290r60zd.pdf
SJMN290R60ZD Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN290R60ZD SJMN290R60Z TO-252 Marking Information SJMN Column
9.3. Size:657K auk
sjmn250r80zf.pdf
SJMN250R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN250R80ZF N250R80Z TO-220F-3L Marking Information Column 1:
9.4. Size:626K auk
sjmn290r60zf.pdf
SJMN290R60ZF Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information Part Number Marking Package TO-220F-3L SJMN290R60ZF N290R60Z TO-220F-3L Marking Information Column 1: Ma
9.5. Size:630K auk
sjmn250r80zb.pdf
SJMN250R80ZB Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss D Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package SJMN250R80ZB SJMN250R80Z TO-263 (D2-PAK) Marking Inform
9.6. Size:653K auk
sjmn250r80zp.pdf
SJMN250R80ZP Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220AB-3L Part Number Marking Package SJMN250R80ZP N250R80Z TO-220AB-3L Marking Information Column
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