Справочник MOSFET. SJMN230R70ZF

 

SJMN230R70ZF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SJMN230R70ZF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 38 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для SJMN230R70ZF

 

 

SJMN230R70ZF Datasheet (PDF)

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SJMN230R70ZF SJMN230R70ZF

SJMN230R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: RDS(on)=0.2 (Typ.) Very Low FOM (R X Q ) DS(on) g 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN230R70ZF N230R70Z TO-22

 9.1. Size:633K  auk
 sjmn250r80zw.pdf

SJMN230R70ZF SJMN230R70ZF

SJMN250R80ZW Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode Ordering Information G D S Part Number Marking Package TO-247 SJMN250R80ZW N250R80Z TO-247 Marking Information Column 1: Manufac

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SJMN230R70ZF SJMN230R70ZF

SJMN290R60ZD Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN290R60ZD SJMN290R60Z TO-252 Marking Information SJMN Column

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 sjmn250r80zf.pdf

SJMN230R70ZF SJMN230R70ZF

SJMN250R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN250R80ZF N250R80Z TO-220F-3L Marking Information Column 1:

 9.4. Size:626K  auk
 sjmn290r60zf.pdf

SJMN230R70ZF SJMN230R70ZF

SJMN290R60ZF Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information Part Number Marking Package TO-220F-3L SJMN290R60ZF N290R60Z TO-220F-3L Marking Information Column 1: Ma

 9.5. Size:630K  auk
 sjmn250r80zb.pdf

SJMN230R70ZF SJMN230R70ZF

SJMN250R80ZB Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss D Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package SJMN250R80ZB SJMN250R80Z TO-263 (D2-PAK) Marking Inform

 9.6. Size:653K  auk
 sjmn250r80zp.pdf

SJMN230R70ZF SJMN230R70ZF

SJMN250R80ZP Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220AB-3L Part Number Marking Package SJMN250R80ZP N250R80Z TO-220AB-3L Marking Information Column

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