FQP9P25 PDF and Equivalents Search

 

FQP9P25 Specs and Replacement

Type Designator: FQP9P25

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm

Package: TO220

FQP9P25 substitution

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FQP9P25 datasheet

 ..1. Size:563K  fairchild semi
 fqp9p25.pdf pdf_icon

FQP9P25

December 2000 TM QFET QFET QFET QFET FQP9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is es... See More ⇒

 ..2. Size:875K  onsemi
 fqp9p25.pdf pdf_icon

FQP9P25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , IRFP460 , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C , FDU6N50 , FQPF11N50CF , FQPF11P06 , FQPF13N06L .

Keywords - FQP9P25 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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