All MOSFET. FQPF10N20C Datasheet

 

FQPF10N20C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF10N20C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO220F

FQPF10N20C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF10N20C Datasheet (PDF)

1.1. fqpf10n20.pdf Size:764K _fairchild_semi

FQPF10N20C
FQPF10N20C

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has be

1.2. fqp10n20c fqpf10n20c.pdf Size:875K _fairchild_semi

FQPF10N20C
FQPF10N20C

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailored to Fast

 1.3. fqpf10n20c.pdf Size:201K _inchange_semiconductor

FQPF10N20C
FQPF10N20C

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQPF10N20C ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gat

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