FDU6N50
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDU6N50
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 89
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.8
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package:
TO251
IPAK
FDU6N50
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDU6N50
Datasheet (PDF)
..1. Size:458K fairchild semi
fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf 
November 2013FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mFeatures Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p
..2. Size:851K fairchild semi
fdd6n50 fdu6n50.pdf
January 2006TMUniFETFDD6N50/FDU6N50 500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tai
..3. Size:928K onsemi
fdd6n50 fdu6n50.pdf
FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mDescriptionFeatures RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 AUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 pF)provide bet
0.1. Size:375K fairchild semi
fdu6n50f.pdf
January 2012UniFET TMFDD6N50F / FDU6N50FtmN-Channel MOSFET 500V, 5.5A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 15nC)stripe, DMOS technology. Low Crss ( Typ. 6.3pF)This advance technology h
0.2. Size:648K fairchild semi
fdd6n50f fdu6n50f.pdf
July 2007UniFETTMFDD6N50F / FDU6N50FtmN-Channel MOSFET 500V, 5.5A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 15nC)stripe, DMOS technology. Low Crss ( Typ. 6.3pF)This advance technology has
9.1. Size:417K fairchild semi
fdu6n25.pdf
November 2013FDU6N25N-Channel UniFETTM MOSFET250 V, 4.4 A, 1.1 Features Description RDS(on) = 0.9 (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF)provi
9.2. Size:376K fairchild semi
fdd6n20 fdu6n20.pdf
May 2007UniFETTMFDD6N20 / FDU6N20tmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has b
9.3. Size:713K fairchild semi
fdd6n25 fdu6n25.pdf
February 2007TMUniFETFDD6N25 / FDU6N25250V N-Channel MOSFETFeatures Description 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially ta
Datasheet: FQP8P10
, FQP9N30
, FQP9N90C
, FQP9P25
, FQPF10N20C
, FDP39N20
, FQPF10N50CF
, FQPF11N40C
, IRFP260N
, FQPF11N50CF
, FQPF11P06
, FQPF13N06L
, FQPF13N50CF
, FQPF15P12
, FQPF16N15
, FQPF16N25C
, FQPF17N40
.
