All MOSFET. FDU6N50 Datasheet

 

FDU6N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDU6N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO251, IPAK

FDU6N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDU6N50 Datasheet (PDF)

1.1. fdu6n50tu.pdf Size:458K _upd-mosfet

FDU6N50
FDU6N50

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 9 p

1.2. fdu6n50f.pdf Size:375K _upd-mosfet

FDU6N50
FDU6N50

January 2012 UniFET TM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 15nC) stripe, DMOS technology. • Low Crss ( Typ. 6.3pF) This advance technology h

 1.3. fdd6n50f fdu6n50f.pdf Size:648K _fairchild_semi

FDU6N50
FDU6N50

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15? Features Description RDS(on) = 0.95? ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology has been especiall

1.4. fdd6n50 fdu6n50.pdf Size:851K _fairchild_semi

FDU6N50
FDU6N50

January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailored to

 1.5. fdu6n50.pdf Size:458K _fairchild_semi

FDU6N50
FDU6N50

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 9 p

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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