FDU6N50 - Даташиты. Аналоги. Основные параметры

November 2013FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mFeatures Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

January 2006TMUniFETFDD6N50/FDU6N50 500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tai

FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mDescriptionFeatures RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 AUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 pF)provide bet

January 2012UniFET TMFDD6N50F / FDU6N50FtmN-Channel MOSFET 500V, 5.5A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 15nC)stripe, DMOS technology. Low Crss ( Typ. 6.3pF)This advance technology h

July 2007UniFETTMFDD6N50F / FDU6N50FtmN-Channel MOSFET 500V, 5.5A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 15nC)stripe, DMOS technology. Low Crss ( Typ. 6.3pF)This advance technology has

November 2013FDU6N25N-Channel UniFETTM MOSFET250 V, 4.4 A, 1.1 Features Description RDS(on) = 0.9 (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF)provi

May 2007UniFETTMFDD6N20 / FDU6N20tmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has b

February 2007TMUniFETFDD6N25 / FDU6N25250V N-Channel MOSFETFeatures Description 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially ta