All MOSFET. SNA3100L10NN Datasheet

 

SNA3100L10NN Datasheet and Replacement


   Type Designator: SNA3100L10NN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: (DFN3X3)
 

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SNA3100L10NN Datasheet (PDF)

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SNA3100L10NN

SNA3100L10NN Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC(Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8M SNA3100L10NN 3100L10 (DFN 3x

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SNA3100L10NN

SNA3100L10NL Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC (Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNA3100L10NL 3100L10 (DFN 5x

Datasheet: SMK0760F , SMK0780F , SMK1040F , SMK1065F , SMN03T80I , SMN0665FD , SMN630LD , SNA3100L10NL , IRF4905 , SNN055N085D , SNN060L10F , SNN060L10NL , SNN10R10LD , SNN10R10LF , SNN1120L10Q , SNN1530NL , SNN1830NL .

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