SNN300L06D Datasheet and Replacement
Type Designator: SNN300L06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 84 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO-252
SNN300L06D substitution
SNN300L06D Datasheet (PDF)
snn300l06d.pdf

SNN300L06D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BVDSS=60V Low gate charge device D Low drain-source On resistance: RDS(on)=25m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S TO-252 Part Number Marking Package SNN300L06D SNN300L06 TO-252 Ma
Datasheet: SNN060L10F , SNN060L10NL , SNN10R10LD , SNN10R10LF , SNN1120L10Q , SNN1530NL , SNN1830NL , SNN200L10D , 5N60 , SNN3100L10D , SNN3100L10Q , SNN3100L15Q , SNN3530BNL , SNN3530NL , SNP130L04F , SNP250L06F , SRN0765D .
History: MDIS2N65BTH | AOC2802
Keywords - SNN300L06D MOSFET datasheet
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History: MDIS2N65BTH | AOC2802



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