All MOSFET. SNN300L06D Datasheet

 

SNN300L06D Datasheet and Replacement


   Type Designator: SNN300L06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14.2 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-252
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SNN300L06D Datasheet (PDF)

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SNN300L06D

SNN300L06D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BVDSS=60V Low gate charge device D Low drain-source On resistance: RDS(on)=25m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S TO-252 Part Number Marking Package SNN300L06D SNN300L06 TO-252 Ma

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History: TK2P60D | DMP2104LP | IRFBG20

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