SNN300L06D MOSFET. Datasheet pdf. Equivalent
Type Designator: SNN300L06D
Marking Code: SNN300L06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.6 nC
trⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 84 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO-252
SNN300L06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SNN300L06D Datasheet (PDF)
snn300l06d.pdf
SNN300L06D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BVDSS=60V Low gate charge device D Low drain-source On resistance: RDS(on)=25m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S TO-252 Part Number Marking Package SNN300L06D SNN300L06 TO-252 Ma
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMN15N65C2
History: WMN15N65C2
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