All MOSFET. SNN3100L10D Datasheet

 

SNN3100L10D Datasheet and Replacement


   Type Designator: SNN3100L10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-252
 

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SNN3100L10D Datasheet (PDF)

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SNN3100L10D

SNN3100L10D Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC (Typ.) gD Logic level gate drive 100% avalanche tested Halogen free and RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SNN3100L10D N3100L10 TO-252 M

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SNN3100L10D

SNN3100L10Q Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC(Typ.) at V = 10V g GS High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 S

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SNN3100L10D

SNN3100L15Q Advanced N-Ch Trench MOSFET 150V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 13nC (Typ.) g High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 SNN3100L15Q N

Datasheet: SNN060L10NL , SNN10R10LD , SNN10R10LF , SNN1120L10Q , SNN1530NL , SNN1830NL , SNN200L10D , SNN300L06D , 4N60 , SNN3100L10Q , SNN3100L15Q , SNN3530BNL , SNN3530NL , SNP130L04F , SNP250L06F , SRN0765D , SRN0765F .

Keywords - SNN3100L10D MOSFET datasheet

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