SNN3100L10D Specs and Replacement

Type Designator: SNN3100L10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.6 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO-252

SNN3100L10D substitution

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SNN3100L10D datasheet

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SNN3100L10D

SNN3100L10D Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance 310m at V = 10V, I = 2A GS D Low gate charge Q = 7nC (Typ.) g D Logic level gate drive 100% avalanche tested Halogen free and RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SNN3100L10D N3100L10 TO-252 M... See More ⇒

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SNN3100L10D

SNN3100L10Q Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance 310m at V = 10V, I = 2A GS D Low gate charge Q = 7nC(Typ.) at V = 10V g GS High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 S... See More ⇒

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SNN3100L10D

SNN3100L15Q Advanced N-Ch Trench MOSFET 150V Fast Switching MOSFETs Features Low On-state resistance 310m at V = 10V, I = 2A GS D Low gate charge Q = 13nC (Typ.) g High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 SNN3100L15Q N... See More ⇒

Detailed specifications: SNN060L10NL, SNN10R10LD, SNN10R10LF, SNN1120L10Q, SNN1530NL, SNN1830NL, SNN200L10D, SNN300L06D, 12N60, SNN3100L10Q, SNN3100L15Q, SNN3530BNL, SNN3530NL, SNP130L04F, SNP250L06F, SRN0765D, SRN0765F

Keywords - SNN3100L10D MOSFET specs

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