SNN3100L10D Datasheet and Replacement
Type Designator: SNN3100L10D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21.6 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO-252
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SNN3100L10D Datasheet (PDF)
snn3100l10d.pdf

SNN3100L10D Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC (Typ.) gD Logic level gate drive 100% avalanche tested Halogen free and RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SNN3100L10D N3100L10 TO-252 M
snn3100l10q.pdf

SNN3100L10Q Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC(Typ.) at V = 10V g GS High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 S
snn3100l15q.pdf

SNN3100L15Q Advanced N-Ch Trench MOSFET 150V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 13nC (Typ.) g High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 SNN3100L15Q N
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - SNN3100L10D MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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