SRN1660F MOSFET. Datasheet pdf. Equivalent
Type Designator: SRN1660F
Marking Code: SRN1660
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO-220F
SRN1660F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRN1660F Datasheet (PDF)
srn1660f.pdf
SRN1660F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking
srn1660fd.pdf
SRN1660FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin
srn1665fd.pdf
SRN1665FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.46 (Typ.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin
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