SRN1665FD
MOSFET. Datasheet pdf. Equivalent
Type Designator: SRN1665FD
Marking Code: SRN1665
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 121
nS
Cossⓘ -
Output Capacitance: 225
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55
Ohm
Package:
TO-220F
SRN1665FD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRN1665FD
Datasheet (PDF)
..1. Size:618K auk
srn1665fd.pdf
SRN1665FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.46 (Typ.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin
8.1. Size:637K auk
srn1660f.pdf
SRN1660F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking
8.2. Size:634K auk
srn1660fd.pdf
SRN1660FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin
Datasheet: WPB4002
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