SRN1665FD Datasheet. Specs and Replacement

Type Designator: SRN1665FD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 121 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-220F

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SRN1665FD substitution

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SRN1665FD datasheet

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SRN1665FD

SRN1665FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =0.46 (Typ.) DS(on) Low gate charge Q =50nC (Typ.) g Low reverse transfer capacitance C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin... See More ⇒

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SRN1665FD

SRN1660F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =0.47 (Max.) DS(on) Low gate charge Q =50nC (Typ.) g Low reverse transfer capacitance C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking... See More ⇒

 8.2. Size:634K  auk
 srn1660fd.pdf pdf_icon

SRN1665FD

SRN1660FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =0.47 (Max.) DS(on) Low gate charge Q =50nC (Typ.) g Low reverse transfer capacitance C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin... See More ⇒

Detailed specifications: SNN3530NL, SNP130L04F, SNP250L06F, SRN0765D, SRN0765F, SRN127, SRN1660F, SRN1660FD, 5N60, SRN1860F, SRN1860FD, SRN1865FD, SUN05A25F, SUN05A50ZD, SUN05A50ZF, SUN09A40D, SUN50A20CI

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