All MOSFET. SRN1665FD Datasheet

 

SRN1665FD Datasheet and Replacement


   Type Designator: SRN1665FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 121 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220F
 

 SRN1665FD substitution

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SRN1665FD Datasheet (PDF)

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SRN1665FD

SRN1665FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.46 (Typ.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin

 8.1. Size:637K  auk
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SRN1665FD

SRN1660F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking

 8.2. Size:634K  auk
 srn1660fd.pdf pdf_icon

SRN1665FD

SRN1660FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin

Datasheet: SNN3530NL , SNP130L04F , SNP250L06F , SRN0765D , SRN0765F , SRN127 , SRN1660F , SRN1660FD , P60NF06 , SRN1860F , SRN1860FD , SRN1865FD , SUN05A25F , SUN05A50ZD , SUN05A50ZF , SUN09A40D , SUN50A20CI .

History: WMO15N70C4

Keywords - SRN1665FD MOSFET datasheet

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