SRN1860FD Datasheet and Replacement
Type Designator: SRN1860FD
Marking Code: SRN1860
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 57 nC
tr ⓘ - Rise Time: 149 nS
Cossⓘ - Output Capacitance: 264 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
SRN1860FD substitution
SRN1860FD Datasheet (PDF)
srn1860fd.pdf

SRN1860FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Max.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =24pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marki
srn1860f.pdf

SRN1860F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Max.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =24pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S TO-220F-3L Ordering Information Part Number Markin
srn1865fd.pdf

SRN1865FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Typ.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin
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