All MOSFET. SRN1865FD Datasheet

 

SRN1865FD Datasheet and Replacement


   Type Designator: SRN1865FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 149 nS
   Cossⓘ - Output Capacitance: 264 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO-220F
 

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SRN1865FD Datasheet (PDF)

 ..1. Size:637K  auk
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SRN1865FD

SRN1865FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Typ.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin

 8.1. Size:650K  auk
 srn1860f.pdf pdf_icon

SRN1865FD

SRN1860F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Max.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =24pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S TO-220F-3L Ordering Information Part Number Markin

 8.2. Size:649K  auk
 srn1860fd.pdf pdf_icon

SRN1865FD

SRN1860FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Max.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =24pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marki

Datasheet: SRN0765D , SRN0765F , SRN127 , SRN1660F , SRN1660FD , SRN1665FD , SRN1860F , SRN1860FD , IRFP250 , SUN05A25F , SUN05A50ZD , SUN05A50ZF , SUN09A40D , SUN50A20CI , SUN82A20CI , SUN830D , SUN830DN .

History: I740

Keywords - SRN1865FD MOSFET datasheet

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