SRN1865FD
MOSFET. Datasheet pdf. Equivalent
Type Designator: SRN1865FD
Marking Code: SRN1865
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 57
nC
trⓘ - Rise Time: 149
nS
Cossⓘ -
Output Capacitance: 264
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.46
Ohm
Package:
TO-220F
SRN1865FD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRN1865FD
Datasheet (PDF)
..1. Size:637K auk
srn1865fd.pdf
SRN1865FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Typ.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin
8.1. Size:650K auk
srn1860f.pdf
SRN1860F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Max.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =24pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S TO-220F-3L Ordering Information Part Number Markin
8.2. Size:649K auk
srn1860fd.pdf
SRN1860FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.38 (Max.) DS(on) Low gate charge: Q =57nC (Typ.) g Low reverse transfer capacitance: C =24pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marki
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