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SUN830I Spec and Replacement


   Type Designator: SUN830I
   Marking Code: SUN830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.5 nC
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: I-PAK

 SUN830I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUN830I Specs

 ..1. Size:583K  auk
sun830i.pdf pdf_icon

SUN830I

SUN830I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV =500V Min. DSS Low gate charge Q =13.5nC (Typ.) g Low drain-source On resistance R =1.3 (Typ.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information Part Number Marking Package I-PAK SUN830I SUN830 I-PAK Marking Information SUN Column ... See More ⇒

 8.1. Size:660K  auk
sun830dn.pdf pdf_icon

SUN830I

SUN830DN Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =1.3 (Typ.) DS(on) Low gate charge Q =13.5nC (Typ.) D g Low reverse transfer capacitance C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Packa... See More ⇒

 8.2. Size:482K  auk
sun830f.pdf pdf_icon

SUN830I

SUN830F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =1.3 (Typ.) DS(on) Low gate charge Q =13nC (Typ.) g Low reverse transfer capacitance C =8pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN830F SUN830 TO... See More ⇒

 8.3. Size:431K  auk
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SUN830I

SUN830D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =1.3 (Typ.) DS(on) Low gate charge Q =13.5nC (Typ.) g D Low reverse transfer capacitance C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 ... See More ⇒

Detailed specifications: SUN05A50ZD , SUN05A50ZF , SUN09A40D , SUN50A20CI , SUN82A20CI , SUN830D , SUN830DN , SUN830F , IRF520 , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 , AOCR32326 , AOCA32112E , AOCA32116E , AOCA24108E .

Keywords - SUN830I MOSFET specs

 SUN830I cross reference
 SUN830I equivalent finder
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