AOCR36330 Specs and Replacement

Type Designator: AOCR36330

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: CSP6.22X2.5-18

AOCR36330 substitution

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AOCR36330 datasheet

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AOCR36330

AOCR36330 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:590K  aosemi
 aocr35101e.pdf pdf_icon

AOCR36330

AOCR35101E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

 9.2. Size:758K  aosemi
 aocr33105e.pdf pdf_icon

AOCR36330

AOCR33105E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 9.3. Size:670K  aosemi
 aocr32326.pdf pdf_icon

AOCR36330

AOCR32326 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: SUN82A20CI, SUN830D, SUN830DN, SUN830F, SUN830I, QM1830M3, AOCR33105E, AOCR35101E, 2N60, AOCR32326, AOCA32112E, AOCA32116E, AOCA24108E, AOCA32106E, AOCA72114, AOCA32301, AOCA24106C

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