AOCR36330 Datasheet and Replacement
Type Designator: AOCR36330
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: CSP6.22X2.5-18
- MOSFET Cross-Reference Search
AOCR36330 Datasheet (PDF)
aocr36330.pdf

AOCR3633030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
aocr35101e.pdf

AOCR35101E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aocr33105e.pdf

AOCR33105E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aocr32326.pdf

AOCR3232630V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: MPF102 | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS
Keywords - AOCR36330 MOSFET datasheet
AOCR36330 cross reference
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History: MPF102 | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS



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