AOCR36330 Datasheet and Replacement
Type Designator: AOCR36330
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: CSP6.22X2.5-18
AOCR36330 substitution
AOCR36330 Datasheet (PDF)
aocr36330.pdf

AOCR3633030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
aocr35101e.pdf

AOCR35101E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aocr33105e.pdf

AOCR33105E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aocr32326.pdf

AOCR3232630V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
Datasheet: SUN82A20CI , SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , IRF830 , AOCR32326 , AOCA32112E , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 , AOCA24106C .
History: TPH4R10ANL | ME2614-G | PT8205A | HY1808APM | TK80A08K3 | NCE6004 | AOD417
Keywords - AOCR36330 MOSFET datasheet
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History: TPH4R10ANL | ME2614-G | PT8205A | HY1808APM | TK80A08K3 | NCE6004 | AOD417



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