AOCA32112E Datasheet and Replacement
Type Designator: AOCA32112E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 500 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: DFN0.97X0.97C-4L
AOCA32112E Datasheet (PDF)
aoca32112e.pdf

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32116e.pdf

AOCA32116E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca32107e.pdf

AOCA32107E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32106e.pdf

AOCA32106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
Datasheet: SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 , AOCR32326 , AO3401 , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 , AOCA24106C , AOCA24106E , AOCA33103E .
Keywords - AOCA32112E MOSFET datasheet
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