AOCA32112E PDF and Equivalents Search

 

AOCA32112E PDF Specs and Replacement


   Type Designator: AOCA32112E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: DFN0.97X0.97C-4L
 

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AOCA32112E PDF Specs

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AOCA32112E

AOCA32112E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32112E

AOCA32116E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32112E

AOCA32107E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32112E

AOCA32106E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

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Detailed specifications: SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 , AOCR32326 , P60NF06 , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 , AOCA24106C , AOCA24106E , AOCA33103E .

Keywords - AOCA32112E MOSFET specs

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