AOCA32112E Datasheet. Specs and Replacement

Type Designator: AOCA32112E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: DFN0.97X0.97C-4L

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AOCA32112E datasheet

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AOCA32112E

AOCA32112E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32112E

AOCA32116E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32112E

AOCA32107E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32112E

AOCA32106E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

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Detailed specifications: SUN830DN, SUN830F, SUN830I, QM1830M3, AOCR33105E, AOCR35101E, AOCR36330, AOCR32326, MMIS60R580P, AOCA32116E, AOCA24108E, AOCA32106E, AOCA72114, AOCA32301, AOCA24106C, AOCA24106E, AOCA33103E

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