AOCA32112E
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOCA32112E
Marking Code: C*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11.5
nC
trⓘ - Rise Time: 500
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package: DFN0.97X0.97C-4L
AOCA32112E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOCA32112E
Datasheet (PDF)
..1. Size:590K aosemi
aoca32112e.pdf
AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
6.1. Size:577K aosemi
aoca32116e.pdf
AOCA32116E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
7.1. Size:602K aosemi
aoca32107e.pdf
AOCA32107E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
7.2. Size:772K aosemi
aoca32106e.pdf
AOCA32106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
7.3. Size:793K aosemi
aoca32108e.pdf
AOCA32108E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
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