All MOSFET. AOCA32116E Datasheet

 

AOCA32116E Datasheet and Replacement


   Type Designator: AOCA32116E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1400 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: DFN1.20X1.20-4L
 

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AOCA32116E Datasheet (PDF)

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AOCA32116E

AOCA32116E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)

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AOCA32116E

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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AOCA32116E

AOCA32107E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 7.2. Size:772K  aosemi
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AOCA32116E

AOCA32106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

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Datasheet: SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 , AOCR32326 , AOCA32112E , 75N75 , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 , AOCA24106C , AOCA24106E , AOCA33103E , AOCA33104A .

Keywords - AOCA32116E MOSFET datasheet

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