AOCA32116E Specs and Replacement
Type Designator: AOCA32116E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1400 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: DFN1.20X1.20-4L
AOCA32116E substitution
- MOSFET ⓘ Cross-Reference Search
AOCA32116E datasheet
aoca32116e.pdf
AOCA32116E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒
aoca32112e.pdf
AOCA32112E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒
aoca32107e.pdf
AOCA32107E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒
aoca32106e.pdf
AOCA32106E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒
Detailed specifications: SUN830F, SUN830I, QM1830M3, AOCR33105E, AOCR35101E, AOCR36330, AOCR32326, AOCA32112E, 75N75, AOCA24108E, AOCA32106E, AOCA72114, AOCA32301, AOCA24106C, AOCA24106E, AOCA33103E, AOCA33104A
Keywords - AOCA32116E MOSFET specs
AOCA32116E cross reference
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History: AOCA32106E
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