All MOSFET. AOCA24108E Datasheet

 

AOCA24108E Datasheet and Replacement


   Type Designator: AOCA24108E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN1.79X1.18-6L
 

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AOCA24108E Datasheet (PDF)

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AOCA24108E

AOCA24108E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

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AOCA24108E

AOCA24106C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 6.2. Size:628K  aosemi
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AOCA24108E

AOCA24106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

Datasheet: SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 , AOCR32326 , AOCA32112E , AOCA32116E , RU6888R , AOCA32106E , AOCA72114 , AOCA32301 , AOCA24106C , AOCA24106E , AOCA33103E , AOCA33104A , AOCA33104E .

History: SCT2750NY | IRF7306QPBF

Keywords - AOCA24108E MOSFET datasheet

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