AOCA33103E Datasheet and Replacement
Type Designator: AOCA33103E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9000 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: DFN2.52X2.52-10L
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AOCA33103E Datasheet (PDF)
aoca33103e.pdf

AOCA33103E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca33104a.pdf

AOCA33104A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca33104e.pdf

AOCA33104E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca33102e.pdf

AOCA33102E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXTA08N120P | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | STD6N60M2 | UPA2756GR
Keywords - AOCA33103E MOSFET datasheet
AOCA33103E cross reference
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History: IXTA08N120P | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | STD6N60M2 | UPA2756GR



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