AOC3860C Specs and Replacement

Type Designator: AOC3860C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3800 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN3.05X1.77B-6L

AOC3860C substitution

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AOC3860C datasheet

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AOC3860C

AOC3860C 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOC3860C

AOC3860A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOC3860C

AOC3860 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOC3860C

AOC3864 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V) ... See More ⇒

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Detailed specifications: AONT21313C, AONT32136C, AOC3870A, AOCA32107E, AOC3870C, AOCA32108E, AOCA35212E, AOC3860A, 60N06, AOCA33102E, AOCA36116C, AOCA32317, AONR30310, AONR32318, AONR34332C, AONR36321, AONR62921

Keywords - AOC3860C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.