AOCA33102E Specs and Replacement

Type Designator: AOCA33102E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: DFN3.0X2.74-14L

AOCA33102E substitution

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AOCA33102E datasheet

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AOCA33102E

AOCA33102E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA33102E

AOCA33103E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA33102E

AOCA33104A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

 6.3. Size:817K  aosemi
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AOCA33102E

AOCA33104E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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Detailed specifications: AONT32136C, AOC3870A, AOCA32107E, AOC3870C, AOCA32108E, AOCA35212E, AOC3860A, AOC3860C, IRFP064N, AOCA36116C, AOCA32317, AONR30310, AONR32318, AONR34332C, AONR36321, AONR62921, AONR66820

Keywords - AOCA33102E MOSFET specs

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