AOCA33102E Datasheet and Replacement
Type Designator: AOCA33102E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: DFN3.0X2.74-14L
AOCA33102E substitution
AOCA33102E Datasheet (PDF)
aoca33102e.pdf

AOCA33102E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca33103e.pdf

AOCA33103E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca33104a.pdf

AOCA33104A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca33104e.pdf

AOCA33104E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
Datasheet: AONT32136C , AOC3870A , AOCA32107E , AOC3870C , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C , 5N50 , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , AONR34332C , AONR36321 , AONR62921 , AONR66820 .
History: SL5N100D | 2P980BC | FS10VS-9 | STB11NM60FD-1 | STFI15N65M5 | STL75N3LLZH5 | AP0803QD
Keywords - AOCA33102E MOSFET datasheet
AOCA33102E cross reference
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History: SL5N100D | 2P980BC | FS10VS-9 | STB11NM60FD-1 | STFI15N65M5 | STL75N3LLZH5 | AP0803QD



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