AONR32318 Specs and Replacement

Type Designator: AONR32318

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: DFN3.3X3.3-8L

AONR32318 substitution

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AONR32318 datasheet

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AONR32318

AONR32318 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V) ... See More ⇒

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 aonr32314.pdf pdf_icon

AONR32318

AONR32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:533K  1
 aonr32340c.pdf pdf_icon

AONR32318

AONR32340C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:369K  aosemi
 aonr32320c.pdf pdf_icon

AONR32318

AONR32320C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOCA32108E, AOCA35212E, AOC3860A, AOC3860C, AOCA33102E, AOCA36116C, AOCA32317, AONR30310, IRF3205, AONR34332C, AONR36321, AONR62921, AONR66820, AONR66821, AONR66922, AONE38132, AONP36332

Keywords - AONR32318 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs