All MOSFET. AONR32318 Datasheet

 

AONR32318 Datasheet and Replacement


   Type Designator: AONR32318
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: DFN3.3X3.3-8L
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AONR32318 Datasheet (PDF)

 ..1. Size:354K  aosemi
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AONR32318

AONR3231830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V)

 6.1. Size:348K  aosemi
 aonr32314.pdf pdf_icon

AONR32318

AONR3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V)

 7.1. Size:533K  1
 aonr32340c.pdf pdf_icon

AONR32318

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:369K  aosemi
 aonr32320c.pdf pdf_icon

AONR32318

AONR32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

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Keywords - AONR32318 MOSFET datasheet

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