AONR36321 Datasheet and Replacement
Type Designator: AONR36321
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.8 nS
Cossⓘ - Output Capacitance: 275 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: DFN3.3X3.3-8L
AONR36321 substitution
AONR36321 Datasheet (PDF)
aonr36321.pdf

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36326c.pdf

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36328.pdf

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36329.pdf

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , AONR34332C , IRF840 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 .
History: 4N80G-TF2-T | NTD25P03L1
Keywords - AONR36321 MOSFET datasheet
AONR36321 cross reference
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History: 4N80G-TF2-T | NTD25P03L1



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