All MOSFET. AONR36321 Datasheet

 

AONR36321 Datasheet and Replacement


   Type Designator: AONR36321
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.8 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: DFN3.3X3.3-8L
 

 AONR36321 substitution

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AONR36321 Datasheet (PDF)

 ..1. Size:371K  aosemi
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AONR36321

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:755K  aosemi
 aonr36326c.pdf pdf_icon

AONR36321

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:547K  aosemi
 aonr36328.pdf pdf_icon

AONR36321

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:401K  aosemi
 aonr36329.pdf pdf_icon

AONR36321

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , AONR34332C , IRF840 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 .

History: MRF173 | BRCS050N085HRA | AONR34332C

Keywords - AONR36321 MOSFET datasheet

 AONR36321 cross reference
 AONR36321 equivalent finder
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 AONR36321 replacement

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