AONR36321 Specs and Replacement

Type Designator: AONR36321

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.8 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: DFN3.3X3.3-8L

AONR36321 substitution

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AONR36321 datasheet

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AONR36321

AONR36321 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aonr36326c.pdf pdf_icon

AONR36321

AONR36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR36321

AONR36328 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:401K  aosemi
 aonr36329.pdf pdf_icon

AONR36321

AONR36329 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOC3860A, AOC3860C, AOCA33102E, AOCA36116C, AOCA32317, AONR30310, AONR32318, AONR34332C, IRF840, AONR62921, AONR66820, AONR66821, AONR66922, AONE38132, AONP36332, AONP36336, AONP36320

Keywords - AONR36321 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.