AONR66820 Datasheet and Replacement
Type Designator: AONR66820
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 470 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: DFN3.3X3.3-8L
AONR66820 substitution
AONR66820 Datasheet (PDF)
aonr66820.pdf

AONR66820TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power MOSFET - AlphaSGT2TM technology 80V ID (at VGS=10V) 50A Low RDS(ON) Excellent Qg x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aonr66821.pdf

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aonr66620.pdf

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aonr66922.pdf

AONR66922TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V)
Datasheet: AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , AONR34332C , AONR36321 , AONR62921 , IRF540N , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U .
History: WML22N50C4 | ALD1102ASAL | AOW66412 | STB200NF04 | SFS08R20PF | HD2307 | ISCNH372B
Keywords - AONR66820 MOSFET datasheet
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History: WML22N50C4 | ALD1102ASAL | AOW66412 | STB200NF04 | SFS08R20PF | HD2307 | ISCNH372B



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