AONR66922 MOSFET Datasheet: N-Ch, 100V, 80A. Full specification with pinout and replacement list

AONR66922 Specs and Replacement

Type Designator: AONR66922

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN3.3X3.3-8L

AONR66922 substitution

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AONR66922 datasheet

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AONR66922 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66924 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 32A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66821 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒