AONP36336 Specs and Replacement

Type Designator: AONP36336

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: DFN3.3X3.3B-8L

AONP36336 substitution

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AONP36336 datasheet

 ..1. Size:1546K  aosemi
 aonp36336.pdf pdf_icon

AONP36336

AONP36336 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:716K  aosemi
 aonp36332u.pdf pdf_icon

AONP36336

AONP36332U 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:735K  aosemi
 aonp36332.pdf pdf_icon

AONP36336

AONP36332 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:716K  aosemi
 aonp36320.pdf pdf_icon

AONP36336

AONP36320 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 100A 103A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONR34332C, AONR36321, AONR62921, AONR66820, AONR66821, AONR66922, AONE38132, AONP36332, IRF640, AONP36320, AONP38324, AONP36332U, AONP38324U, AOCA36102E, AOC3878, AONG36322, AONU32320

Keywords - AONP36336 MOSFET specs

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