AONP38324
MOSFET. Datasheet pdf. Equivalent
Type Designator: AONP38324
Marking Code: 38324
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 69
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8
V
|Id|ⓘ - Maximum Drain Current: 134
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 520
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024
Ohm
Package: DFN3.3X3.3C-8L
AONP38324
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AONP38324
Datasheet (PDF)
..1. Size:723K aosemi
aonp38324.pdf
AONP3832430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 134A 110A Low Gate Charge RDS(ON) (at VGS=10V)
0.1. Size:747K aosemi
aonp38324u.pdf
AONP38324U30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 155A 118A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:1546K aosemi
aonp36336.pdf
AONP3633630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:716K aosemi
aonp36332u.pdf
AONP36332U30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:716K aosemi
aonp36320.pdf
AONP3632030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 100A 103A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:735K aosemi
aonp36332.pdf
AONP3633230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)
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