All MOSFET. AONH36328 Datasheet

 

AONH36328 Datasheet and Replacement


   Type Designator: AONH36328
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DFN3X3A-8L
 

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AONH36328 Datasheet (PDF)

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AONH36328

AONH3632830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 18A 18A High Current Capability RDS(ON) (at VGS=10V)

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 aonh36334.pdf pdf_icon

AONH36328

AONH3633430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AONP38324 , AONP36332U , AONP38324U , AOCA36102E , AOC3878 , AONG36322 , AONU32320 , AON7264C , P55NF06 , AONH36334 , AONR20334C , AONR20485 , AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C .

History: ECH8690 | HM2800D | IPB083N10N3 | 2SK3830 | APT6015B2VFRG | PHP3055L | 5N90AF

Keywords - AONH36328 MOSFET datasheet

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