All MOSFET. AONR20334C Datasheet

 

AONR20334C Datasheet and Replacement


   Type Designator: AONR20334C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN3X3A-8L
 

 AONR20334C substitution

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AONR20334C Datasheet (PDF)

 ..1. Size:388K  aosemi
 aonr20334c.pdf pdf_icon

AONR20334C

AONR20334C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:383K  aosemi
 aonr20485.pdf pdf_icon

AONR20334C

AONR2048540V P-Channel MOSFETGeneral Description Product SummaryVDS-40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.1. Size:312K  1
 aonr21357.pdf pdf_icon

AONR20334C

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.2. Size:318K  1
 aonr21321.pdf pdf_icon

AONR20334C

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

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Datasheet: AONP38324U , AOCA36102E , AOC3878 , AONG36322 , AONU32320 , AON7264C , AONH36328 , AONH36334 , 2N7000 , AONR20485 , AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C , AONR36326C , AONR36328 .

Keywords - AONR20334C MOSFET datasheet

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