Справочник MOSFET. AONR20334C

 

AONR20334C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AONR20334C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 23 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.3 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: DFN3X3A-8L

 Аналог (замена) для AONR20334C

 

 

AONR20334C Datasheet (PDF)

 ..1. Size:388K  aosemi
 aonr20334c.pdf

AONR20334C AONR20334C

AONR20334C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:383K  aosemi
 aonr20485.pdf

AONR20334C AONR20334C

AONR2048540V P-Channel MOSFETGeneral Description Product SummaryVDS-40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.1. Size:312K  1
 aonr21357.pdf

AONR20334C AONR20334C

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.2. Size:318K  1
 aonr21321.pdf

AONR20334C AONR20334C

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.3. Size:1080K  aosemi
 aonr26309a.pdf

AONR20334C AONR20334C

AONR26309A30V Complementary MOSFETGeneral Description Product SummaryN-channel P-channelThe AONR26309A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. TheVDS (V) = 30V VDS (V) = -30Vcomplementary MOSFETs may be used in inverter andID = 14A ID = -21A (VGS = 10V)other applications.RDS(ON)

 9.4. Size:314K  aosemi
 aonr21307.pdf

AONR20334C AONR20334C

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.5. Size:312K  aosemi
 aonr21357.pdf

AONR20334C AONR20334C

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.6. Size:545K  aosemi
 aonr21117.pdf

AONR20334C AONR20334C

AONR2111720V P-Channel MOSFETGeneral Description Product SummaryVDS-20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-4.5V) -34A High Current Capability RDS(ON) (at VGS=-4.5V)

 9.7. Size:789K  aosemi
 aonr21305c.pdf

AONR20334C AONR20334C

AONR21305C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.8. Size:318K  aosemi
 aonr21321.pdf

AONR20334C AONR20334C

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.9. Size:475K  aosemi
 aonr21311c.pdf

AONR20334C AONR20334C

AONR21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V)

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IPD25DP06NM

 

 
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