AONR20485 Datasheet and Replacement. Cross Reference Search

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AONR2048540V P-Channel MOSFETGeneral Description Product SummaryVDS-40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V)

8.1. Size:388K aosemi
aonr20334c.pdf pdf_icon

AONR20334C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

9.1. Size:312K 1
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AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

9.2. Size:318K 1
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AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

9.3. Size:1080K aosemi
aonr26309a.pdf pdf_icon

AONR26309A30V Complementary MOSFETGeneral Description Product SummaryN-channel P-channelThe AONR26309A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. TheVDS (V) = 30V VDS (V) = -30Vcomplementary MOSFETs may be used in inverter andID = 14A ID = -21A (VGS = 10V)other applications.RDS(ON)

9.4. Size:314K aosemi
aonr21307.pdf pdf_icon

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

9.5. Size:312K aosemi
aonr21357.pdf pdf_icon

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

9.6. Size:545K aosemi
aonr21117.pdf pdf_icon

AONR2111720V P-Channel MOSFETGeneral Description Product SummaryVDS-20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-4.5V) -34A High Current Capability RDS(ON) (at VGS=-4.5V)

9.7. Size:789K aosemi
aonr21305c.pdf pdf_icon

AONR21305C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

9.8. Size:318K aosemi
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AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

9.9. Size:475K aosemi
aonr21311c.pdf pdf_icon

AONR21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V)

AONR20485 Datasheet (PDF)

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