AONR20485 Specs and Replacement

Type Designator: AONR20485

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN3X3A-8L

AONR20485 substitution

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AONR20485 datasheet

 ..1. Size:383K  aosemi
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AONR20485

AONR20485 40V P-Channel MOSFET General Description Product Summary VDS -40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

 8.1. Size:388K  aosemi
aonr20334c.pdf pdf_icon

AONR20485

AONR20334C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:312K  1
aonr21357.pdf pdf_icon

AONR20485

AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 9.2. Size:318K  1
aonr21321.pdf pdf_icon

AONR20485

AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

Detailed specifications: AOCA36102E, AOC3878, AONG36322, AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C, P55NF06, AONR21117, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329

Keywords - AONR20485 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.