AONR20485 Specs and Replacement
Type Designator: AONR20485
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN3X3A-8L
AONR20485 substitution
- MOSFET ⓘ Cross-Reference Search
AONR20485 datasheet
aonr20485.pdf
AONR20485 40V P-Channel MOSFET General Description Product Summary VDS -40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aonr20334c.pdf
AONR20334C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aonr21357.pdf
AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aonr21321.pdf
AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
Detailed specifications: AOCA36102E, AOC3878, AONG36322, AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C, P55NF06, AONR21117, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329
Keywords - AONR20485 MOSFET specs
AONR20485 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AONR20334C
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