AONR21311C Specs and Replacement

Type Designator: AONR21311C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 11 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: DFN3X3A-8L

AONR21311C substitution

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AONR21311C datasheet

 ..1. Size:475K  aosemi
 aonr21311c.pdf pdf_icon

AONR21311C

AONR21311C 30V P-Channel MOSFET General Description Product Summary VDS -30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.1. Size:312K  1
 aonr21357.pdf pdf_icon

AONR21311C

AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.2. Size:318K  1
 aonr21321.pdf pdf_icon

AONR21311C

AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.3. Size:314K  aosemi
 aonr21307.pdf pdf_icon

AONR21311C

AONR21307 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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Detailed specifications: AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C, AONR20485, AONR21117, AONR21305C, IRFP250N, AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329, AONR66620, AONR66924, AONL32328

Keywords - AONR21311C MOSFET specs

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