All MOSFET. AONR21311C Datasheet

 

AONR21311C Datasheet and Replacement


   Type Designator: AONR21311C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 11 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: DFN3X3A-8L
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AONR21311C Datasheet (PDF)

 ..1. Size:475K  aosemi
 aonr21311c.pdf pdf_icon

AONR21311C

AONR21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:312K  1
 aonr21357.pdf pdf_icon

AONR21311C

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:318K  1
 aonr21321.pdf pdf_icon

AONR21311C

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 7.3. Size:314K  aosemi
 aonr21307.pdf pdf_icon

AONR21311C

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

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History: NVMFS5C673NL | 2N65KG-TF3-T | 2SJ146 | IRFP044PBF | 2SK2765-01 | 2N65KG-TF2-T | 2SK810

Keywords - AONR21311C MOSFET datasheet

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