AONR32320C Specs and Replacement

Type Designator: AONR32320C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 11 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: DFN3X3A-8L

AONR32320C substitution

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AONR32320C datasheet

 ..1. Size:369K  aosemi
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AONR32320C

AONR32320C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:533K  1
aonr32340c.pdf pdf_icon

AONR32320C

AONR32340C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:348K  aosemi
aonr32314.pdf pdf_icon

AONR32320C

AONR32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

 7.3. Size:354K  aosemi
aonr32318.pdf pdf_icon

AONR32320C

AONR32318 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONH36328, AONH36334, AONR20334C, AONR20485, AONR21117, AONR21305C, AONR21311C, AONR26309A, IRF9540, AONR36326C, AONR36328, AONR36329, AONR66620, AONR66924, AONL32328, AOE66410, AON6152A

Keywords - AONR32320C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.