AONR36328 Specs and Replacement

Type Designator: AONR36328

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: DFN3X3A-8L

AONR36328 substitution

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AONR36328 datasheet

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AONR36328

AONR36328 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aonr36321.pdf pdf_icon

AONR36328

AONR36321 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:755K  aosemi
 aonr36326c.pdf pdf_icon

AONR36328

AONR36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:401K  aosemi
 aonr36329.pdf pdf_icon

AONR36328

AONR36329 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONR20334C, AONR20485, AONR21117, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AONR36326C, 2SK3878, AONR36329, AONR66620, AONR66924, AONL32328, AOE66410, AON6152A, AON6264C, AON6590A

Keywords - AONR36328 MOSFET specs

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