All MOSFET. AONR36329 Datasheet

 

AONR36329 Datasheet and Replacement


   Type Designator: AONR36329
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DFN3X3A-8L
 

 AONR36329 substitution

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AONR36329 Datasheet (PDF)

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AONR36329

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:371K  aosemi
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AONR36329

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:755K  aosemi
 aonr36326c.pdf pdf_icon

AONR36329

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:547K  aosemi
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AONR36329

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONR20485 , AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C , AONR36326C , AONR36328 , 12N60 , AONR66620 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 .

History: WM03DN85A | SQJ964EP

Keywords - AONR36329 MOSFET datasheet

 AONR36329 cross reference
 AONR36329 equivalent finder
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