AONR36329 Datasheet and Replacement
Type Designator: AONR36329
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DFN3X3A-8L
AONR36329 substitution
AONR36329 Datasheet (PDF)
aonr36329.pdf

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36321.pdf

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36326c.pdf

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36328.pdf

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONR20485 , AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C , AONR36326C , AONR36328 , SKD502T , AONR66620 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 .
History: SFF054C | SSB80R240SFD | 1H05 | BRFL24N50 | DMN4027SSD | MIC94052BC6TR | SM9435
Keywords - AONR36329 MOSFET datasheet
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History: SFF054C | SSB80R240SFD | 1H05 | BRFL24N50 | DMN4027SSD | MIC94052BC6TR | SM9435



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