AONR36329 Specs and Replacement

Type Designator: AONR36329

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: DFN3X3A-8L

AONR36329 substitution

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AONR36329 datasheet

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AONR36329

AONR36329 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR36329

AONR36321 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:755K  aosemi
 aonr36326c.pdf pdf_icon

AONR36329

AONR36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:547K  aosemi
 aonr36328.pdf pdf_icon

AONR36329

AONR36328 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONR20485, AONR21117, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AONR36326C, AONR36328, STP75NF75, AONR66620, AONR66924, AONL32328, AOE66410, AON6152A, AON6264C, AON6590A, AONA66916

Keywords - AONR36329 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.