AONR66620 Specs and Replacement

Type Designator: AONR66620

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm

Package: DFN3X3A-8L

AONR66620 substitution

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AONR66620 datasheet

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AONR66620

AONR66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66620

AONR66821 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:806K  aosemi
 aonr66922.pdf pdf_icon

AONR66620

AONR66922 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:487K  aosemi
 aonr66924.pdf pdf_icon

AONR66620

AONR66924 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 32A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONR21117, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329, 2N7002, AONR66924, AONL32328, AOE66410, AON6152A, AON6264C, AON6590A, AONA66916, AOND32324

Keywords - AONR66620 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.