All MOSFET. AONR66620 Datasheet

 

AONR66620 Datasheet and Replacement


   Type Designator: AONR66620
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: DFN3X3A-8L
 

 AONR66620 substitution

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AONR66620 Datasheet (PDF)

 ..1. Size:483K  aosemi
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AONR66620

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

 8.1. Size:442K  aosemi
 aonr66821.pdf pdf_icon

AONR66620

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 8.2. Size:806K  aosemi
 aonr66922.pdf pdf_icon

AONR66620

AONR66922TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.3. Size:487K  aosemi
 aonr66924.pdf pdf_icon

AONR66620

AONR66924TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 32A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C , AONR36326C , AONR36328 , AONR36329 , K4145 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 , AOND32324 .

History: 2SK303

Keywords - AONR66620 MOSFET datasheet

 AONR66620 cross reference
 AONR66620 equivalent finder
 AONR66620 lookup
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 AONR66620 replacement

 

 
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