AONR66924 Datasheet and Replacement
Type Designator: AONR66924
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 365 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: DFN3X3A-8L
AONR66924 substitution
AONR66924 Datasheet (PDF)
aonr66924.pdf

AONR66924TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 32A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aonr66922.pdf

AONR66922TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V)
aonr66620.pdf

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aonr66821.pdf

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
Datasheet: AONR21305C , AONR21311C , AONR26309A , AONR32320C , AONR36326C , AONR36328 , AONR36329 , AONR66620 , IRF1010E , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 , AOND32324 , AOND62930 .
History: IRFH8311 | LNC2N65 | AP6679BGJ-HF | AP6C036M | 2SK371 | 2SK1841 | P2803BMG
Keywords - AONR66924 MOSFET datasheet
AONR66924 cross reference
AONR66924 equivalent finder
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AONR66924 replacement
History: IRFH8311 | LNC2N65 | AP6679BGJ-HF | AP6C036M | 2SK371 | 2SK1841 | P2803BMG



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