AONL32328 Specs and Replacement
Type Designator: AONL32328
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: DFN4X3A-12L
AONL32328 substitution
- MOSFET ⓘ Cross-Reference Search
AONL32328 datasheet
aonl32328.pdf
AONL32328 30V Complementary MOSFET General Description Product Summary P-channel(Q1/Q3) N-channel(Q2/Q4) Pch+Nch Complementary MOSFET Trench Power MOSFET VDS (V) = -30V VDS (V) = 30V Low RDS(ON) ID = -7A ID = 8A (VGS = 10V) Low Gate Charge RDS(ON) ... See More ⇒
Detailed specifications: AONR21311C, AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329, AONR66620, AONR66924, IRF4905, AOE66410, AON6152A, AON6264C, AON6590A, AONA66916, AOND32324, AOND62930, AONS18314
Keywords - AONL32328 MOSFET specs
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