AONL32328 Datasheet and Replacement
Type Designator: AONL32328
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: DFN4X3A-12L
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AONL32328 Datasheet (PDF)
aonl32328.pdf

AONL3232830V Complementary MOSFETGeneral Description Product SummaryP-channel(Q1/Q3) N-channel(Q2/Q4) Pch+Nch Complementary MOSFET Trench Power MOSFETVDS (V) = -30V VDS (V) = 30V Low RDS(ON)ID = -7A ID = 8A (VGS = 10V) Low Gate ChargeRDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSF65R570GT | CSD16342Q5A
Keywords - AONL32328 MOSFET datasheet
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History: LSF65R570GT | CSD16342Q5A



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