AON6152A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6152A
Marking Code: 6152A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 26
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 1120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00115
Ohm
Package:
DFN5X6-8L
AON6152A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6152A
Datasheet (PDF)
..1. Size:360K aosemi
aon6152a.pdf 
AON6152ATM45V N-Channel AlphaSGTGeneral Description Product SummaryVDS45V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:318K aosemi
aon6156.pdf
AON615645V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 45V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:308K aosemi
aon6154.pdf
AON615445V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 45V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:312K 1
aon6144.pdf
AON614440V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:322K aosemi
aon6160.pdf
AON6160TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:337K aosemi
aon6162.pdf
AON6162TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:312K aosemi
aon6144.pdf
AON614440V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: WPB4002
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, FMM22-06PF
.
