All MOSFET. AONS1R1A70 Datasheet

 

AONS1R1A70 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONS1R1A70
   Marking Code: 1R1A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.4 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: DFN5X6-8L

 AONS1R1A70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONS1R1A70 Datasheet (PDF)

 ..1. Size:688K  aosemi
 aons1r1a70.pdf

AONS1R1A70 AONS1R1A70

AONS1R1A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max

 8.1. Size:671K  aosemi
 aons1r6a70.pdf

AONS1R1A70 AONS1R1A70

AONS1R6A70TM700V, aMOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:432K  aosemi
 aons18314.pdf

AONS1R1A70 AONS1R1A70

AONS1831430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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