All MOSFET. AONS1R1A70 Datasheet

 

AONS1R1A70 Datasheet and Replacement


   Type Designator: AONS1R1A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: DFN5X6-8L
 

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AONS1R1A70 Datasheet (PDF)

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AONS1R1A70

AONS1R1A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max

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AONS1R1A70

AONS1R6A70TM700V, aMOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:432K  aosemi
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AONS1R1A70

AONS1831430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 , AOND32324 , AOND62930 , AONS18314 , TK10A60D , AONS1R6A70 , AONS20485 , AONS21113 , AONS21309C , AONS21321 , AONS30300 , AONS30302 , AONS30306 .

History: IPP80R450P7 | HFU5N50S | FDU6644 | PSMN004-55W | NCEP40T13GU | IPP80R750P7

Keywords - AONS1R1A70 MOSFET datasheet

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