AONS21321 Datasheet and Replacement
Type Designator: AONS21321
Marking Code: 21321
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 24.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 21 nC
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: DFN5X6-8L
AONS21321 substitution
AONS21321 Datasheet (PDF)
aons21321.pdf

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aons21357.pdf

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)
aons21307.pdf

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aons21357.pdf

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)
Datasheet: AOND32324 , AOND62930 , AONS18314 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , AONS21309C , AON7506 , AONS30300 , AONS30302 , AONS30306 , AONS32100 , AONS32106 , AONS32302 , AONS32303 , AONS32304 .
History: IXFP30N60X | US5U1 | ZXMN4A06GTA
Keywords - AONS21321 MOSFET datasheet
AONS21321 cross reference
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History: IXFP30N60X | US5U1 | ZXMN4A06GTA



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