AONS30300 Specs and Replacement

Type Designator: AONS30300

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 483 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 710 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 4020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00058 Ohm

Package: DFN5X6-8L

AONS30300 substitution

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AONS30300 datasheet

 ..1. Size:405K  aosemi
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AONS30300

AONS30300 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:468K  aosemi
aons30302.pdf pdf_icon

AONS30300

AONS30302 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 480A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:414K  aosemi
aons30306.pdf pdf_icon

AONS30300

AONS30306 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 302A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:405K  aosemi
aons34304c.pdf pdf_icon

AONS30300

AONS34304C 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOND62930, AONS18314, AONS1R1A70, AONS1R6A70, AONS20485, AONS21113, AONS21309C, AONS21321, AON6380, AONS30302, AONS30306, AONS32100, AONS32106, AONS32302, AONS32303, AONS32304, AONS32310

Keywords - AONS30300 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs