AONS32106 Datasheet and Replacement
Type Designator: AONS32106
Marking Code: 32106
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 31 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 485 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: DFN5X6-8L
AONS32106 substitution
AONS32106 Datasheet (PDF)
aons32106.pdf

AONS3210620V N-Channel MOSFETGeneral Description Product SummaryVDS20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
aons32100.pdf

AONS3210025V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)
aons32314.pdf

AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)
aons32302.pdf

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONS20485 , AONS21113 , AONS21309C , AONS21321 , AONS30300 , AONS30302 , AONS30306 , AONS32100 , IRFP250 , AONS32302 , AONS32303 , AONS32304 , AONS32310 , AONS34304C , AONS34308C , AONS36302 , AONS36303 .
History: US5U3
Keywords - AONS32106 MOSFET datasheet
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History: US5U3



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