AONS32106 Specs and Replacement

Type Designator: AONS32106

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 485 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: DFN5X6-8L

AONS32106 substitution

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AONS32106 datasheet

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aons32106.pdf pdf_icon

AONS32106

AONS32106 20V N-Channel MOSFET General Description Product Summary VDS 20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) ... See More ⇒

 6.1. Size:633K  aosemi
aons32100.pdf pdf_icon

AONS32106

AONS32100 25V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:384K  aosemi
aons32314.pdf pdf_icon

AONS32106

AONS32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:693K  aosemi
aons32302.pdf pdf_icon

AONS32106

AONS32302 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS20485, AONS21113, AONS21309C, AONS21321, AONS30300, AONS30302, AONS30306, AONS32100, AON7506, AONS32302, AONS32303, AONS32304, AONS32310, AONS34304C, AONS34308C, AONS36302, AONS36303

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs