AONS32303 Datasheet and Replacement
Type Designator: AONS32303
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 740 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: DFN5X6-8L
AONS32303 substitution
AONS32303 Datasheet (PDF)
aons32303.pdf

AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)
aons32302.pdf

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)
aons32306.pdf

AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)
aons32304.pdf

AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)
Datasheet: AONS21309C , AONS21321 , AONS30300 , AONS30302 , AONS30306 , AONS32100 , AONS32106 , AONS32302 , IRF1407 , AONS32304 , AONS32310 , AONS34304C , AONS34308C , AONS36302 , AONS36303 , AONS36304 , AONS36306 .
History: APT5016BFLLG | GSM3050S | SIHFPC60 | IRF7665S2TR1PBF | DMP6110SVT | ELM32403LA | IRF1405ZPBF
Keywords - AONS32303 MOSFET datasheet
AONS32303 cross reference
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History: APT5016BFLLG | GSM3050S | SIHFPC60 | IRF7665S2TR1PBF | DMP6110SVT | ELM32403LA | IRF1405ZPBF



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